Device including PCM RF switch integrated with group III-V semiconductors
US10916540B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2018 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Apr 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There are disclosed herein various implementations of a semiconductor device including a group III-V layer situated over a substrate, and a phase-change material (PCM) radio frequency (RF) switch situated over the group III-V layer. The PCM RF switch couples a group III-V transistor situated over the group III-V layer to one of an integrated passive element or another group III-V transistor situated over the group III-V layer. The PCM RF switch includes a heating element transverse to the PCM, the heating element underlying an active segment of the PCM. The PCM RF switch is configured to be electrically conductive when the active segment of the PCM is in a crystalline state, and to be electrically insulative when the active segment of the PCM is in an amorphous state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.