Oxide thin film transistor, array substrate, and preparation methods thereof
US10916662B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2019 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Aug 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
An oxide thin film transistor, an array substrate, and preparation methods thereof are disclosed. The method for preparing an oxide thin film transistor comprises a step of forming a pattern comprising an oxide semiconductor active layer on a substrate, wherein the step comprises: forming an amorphous oxide semiconductor thin film on the substrate; performing an excimer laser annealing, at least at a position in the amorphous oxide semiconductor thin film corresponding to a channel region of oxide semiconductor active layer to be formed, such that the amorphous oxide semiconductor material at the laser-annealed position is crystallized, to form a crystalline oxide semiconductor material; and forming the pattern comprising the oxide semiconductor active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.