High efficiency multijunction photovoltaic cells
US10916675B2 · kind B2 · utility
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Key dates
| Filing date | Feb 22, 2019 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Aug 7, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E70/30
Abstract
Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.