Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip
US10916688B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2020 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Jun 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/032
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer, a second semiconductor layer; a first metal layer arranged on at least a portion of the first semiconductor layer and in contact with the first semiconductor layer; and an electrode layer arranged over the light emitting structure, and having a first electrode layer and a second electrode layer. The first electrode layer is electrically coupled to the first and second semiconductor layers; the second electrode layer is configured for bonding with a package substrate, and includes a first and second bonding regions; the first bonding region is electrically coupled to the first semiconductor layer; the second bonding region is electrically coupled to the second semiconductor layer; and the first metal layer is not overlapped with the first bonding region of the second bonding region in a vertical direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.