Method for actuating reverse-conducting semiconductor switches arranged in parallel
US10917085B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Jun 26, 2017 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Jun 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0009
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In a method for actuating reverse-conducting semiconductor switches, a plurality of reverse-conducting semiconductor switches is arranged in a parallel circuit. Gate contacts of switching elements of at least two of the plurality of reverse-conducting semiconductor switches are controlled by actuating the at least two of the reverse-conducting semiconductor switches at least intermittently with different voltages, thereby allowing to influence a behavior of the switching elements of the at least two of the reverse-conducting semiconductor switches in IGBT (Insulated-Gate-Bipolar-Transistor) and a behavior in diode mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.