Etching compositions
US10920144B2 · kind B2 · utility
3Cited by
3References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Jul 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.