Optoelectronic device
US10921616B2 · kind B2 · utility
1Cited by
98References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | May 22, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J1/0425
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.