Patent · US Active

Liquid crystal-based high-frequency device and high-frequency switch

US10921654B2 · kind B2 · utility

0Cited by
6References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 25, 2017
Grant dateFeb 16, 2021
Priority date
Expiry dateJan 4, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01P1/15
  • WIPO fieldTelecommunications
  • WIPO sectorElectrical engineering

Abstract

A high-frequency device and/or a high-frequency switch including the same may include: a signal electrode; a first ground electrode arranged in parallel with the signal electrode; a first liquid crystal layer disposed between the signal electrode and the first ground electrode; and a first dielectric layer disposed between the first liquid crystal layer and the first ground electrode, and/or between the signal electrode and the first liquid crystal layer. The first dielectric layer may have a dielectric constant that is larger than the dielectric constant of the first liquid crystal layer. The high-frequency device and/or the high-frequency device including the same may be variously implemented.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.