High-k dielectric layer, fabricating method thereof and multi-function equipment implementing such fabricating method
US10923343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2018 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Sep 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention discloses a high-k dielectric layer, a fabricating method thereof and a multi-function equipment implementing such fabricating method. The high-k dielectric layer of the invention includes M atomic-layer-deposited films formed in sequence on a material layer of a semiconductor device, where M is an integer larger than 1. The material layer can be a semiconductor layer, a metal layer or another dielectric layer. Each atomic-layer-deposited film is formed of an oxide and formed by an atomic layer deposition (ALD) process. N assigned films among the M atomic-layer-deposited films are bombarded by a non-reactive gas plasma during or after the cycles of the ALD process, where N is a natural number and less than or equal to M.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.