Etching method
US10923354B2 · kind B2 · utility
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Key dates
| Filing date | Oct 26, 2017 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Oct 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method in which: molten sodium hydroxide in a prescribed temperature range is used as a molten alkali, whereby an Si surface of an etching surface of an SiC substrate, in which the substrate surface is configured from the Si surface and a C surface, is removed at a higher speed than is the C surface while an oxide film is formed on the etching surface in a high-temperature environment containing oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.