Element chip and manufacturing process thereof
US10923357B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2018 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Jul 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68327
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a manufacturing process of an element chip, which comprises a preparation step, a setting step for setting the substrate on a stage, and a plasma-dicing step for dividing the substrate into a plurality of element chips, wherein the plasma-dicing step is achieved by repeatedly implementing etching routines each including an etching step for etching the second layer along the street regions to form a plurality of grooves and a depositing step for depositing a protective film on inner walls of the grooves, wherein the plasma-dicing step includes a first etching step for forming the grooves each having a first scallop on the inner wall thereof at a first pitch, and a second etching step for forming the grooves each having a second scallop on the inner wall thereof at a second pitch, and wherein the second pitch is greater than the first pitch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.