IGBT device with MOS controllable hole path

US10923583B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Zehong Li · Chengdu, CN
• Xin Peng · Longbeilingcun, CN
• Yishang Zhao · Chengdu, CN
• Min Ren · Nanhu, CN
• Bo Zhang · Shanghai, CN

Key dates

• Filing date: Oct 15, 2019
• Grant date: Feb 16, 2021
• Expiry date: Oct 15, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518

Abstract

The present invention relates to the technical field of power semiconductor devices, particularly to an insulated gate bipolar transistor with a MOS controllable hole path. According to the present invention, a MOS controllable gate structure formed by a gate dielectric layer, a MOS control gate electrode and a P-type MOS channel region are embedded in a P+ floating p-body region of the conventional IGBT structure. The MOS region is equivalent to a switch controlled by a gate voltage. When the device is turned on under a forward voltage, the potential of the p-body region is floated to store holes, reducing the saturation conduction voltage drop of the device. Under the condition of turn-off and short-circuit, the hole extracting path is provided and the Miller capacitance is lowered, thereby lowering the turn-off losses and enhancing the short-circuit withstand capability.