Methods for fabricating thin film III-V compound solar cell
US10923617B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2011 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Jun 21, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.