P—GaN-down micro-LED on semi-polar oriented GaN
US10923630B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Sep 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
Abstract
Disclosed herein are techniques for improving performance of micro light emitting diodes. According to certain embodiments, a semi-polar-oriented light emitting diode (LED) (e.g., grown on (2021) plane or (1122) plane) includes a buried p-GaN layer that is grown before the active region and the n-GaN layer of the LED are grown, such that the polarization-induced (including strain-induced piezoelectric polarization and spontaneous polarization) electrical field and the built-in depletion field in the active region are in opposite directions during normal operations, thereby reducing or minimizing the overall internal electric field that can contribute to Quantum-Confined Stark Effect. The buried p-GaN layer is grown on an n-i-n sacrificial etch junction, which can be laterally wet-etched to separate the semi-polar-oriented LED from the underlying substrate and expose the p-GaN layer for planar or vertical (rather than horizontal or lateral) activation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.