Top-emitting light-emitting diode
US10923633B2 · kind B2 · utility
1Cited by
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12Claims
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Key dates
| Filing date | Jul 11, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Jul 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
Abstract
A top-emitting light-emitting diode includes a glass substrate, a polysilicon layer, a white light emitting layer and a transparent conductive layer. The polysilicon layer is formed on a first surface of the glass substrate. Moreover, plural sub-wavelength structures are discretely arranged on a surface of the polysilicon layer at regular intervals. The white light emitting layer is formed over the polysilicon layer and the plural sub-wavelength structures. The transparent conductive layer is formed over the white light emitting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.