Spin orbit materials for efficient spin current generation
US10923651B2 · kind B2 · utility
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2References
8Claims
0Family size
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Key dates
| Filing date | Aug 16, 2018 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Feb 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a SOT device is provided that replaces a traditional NM layer adjacent to a magnetic layer with a NM layer that is compatible with CMOS technology. The NM layer may include a CMOS-compatible composite (e.g., CuPt) alloy, a TI (e.g., Bi2Se3, BixSe1-x, Bi1-xSbx, etc.) or a TI/non-magnetic metal (e.g., Bi2Se3/Ag, BixSe1-x/Ag, Bi1-xSbx/Ag, etc.) interface, that provides efficient spin current generation. Spin current may be generated in various manners, including extrinsic SHE, TSS or Rashba effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.