Nanofilm, thin film transistor, and manufacture methods thereof
US10923671B2 · kind B2 · utility
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10Claims
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Assignee
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Key dates
| Filing date | Oct 22, 2018 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Nov 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/486
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Disclosed is a nanofilm, a thin film transistor and manufacture methods thereof. The nanofilm of the present disclosure comprises a plurality of regions distributed in a film plane dimension, wherein each of the regions is composed of one kind of nanomaterial, and nanomaterials of adjacent regions are different from each other and contact with each other to form a heterojunction or a Schottky junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.