Monolithic integrated semiconductor random laser

US10923881B2 · kind B2 · utility

Assignee

• TAIYUAN UNIVERSITY OF TECHNOLOGY · CN

Inventors

• Mingjiang Zhang · Taiyuan, CN
• Jianzhong Zhang · Plano, US
• Tianshuang Lv · Taiyuan, CN
• Lijun Qiao · Changchun, CN
• Yi Liu · Hengshan, TW
• Tong Zhao · Eden Prairie, US
• Anbang Wang · Shanghai, CN
• Yuncai Wang · Taiyuan, CN

Key dates

• Filing date: Aug 27, 2018
• Grant date: Feb 16, 2021
• Expiry date: Aug 27, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/1228
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A monolithic integrated semiconductor random laser comprising substrate, lower confinement layer on the substrate, active layer on the lower confinement layer, upper confinement layer on the active layer, strip-shaped waveguide layer longitudinally made in middle of the upper confinement layer, P+ electrode layer divided into two segments and made on the waveguide layer and N+ electrode layer on a back face of the lower confinement layer, wherein the two segments correspond respectively to gain region and random feedback region. The random feedback region uses a doped waveguide to randomly feedback light emitted by the gain region and then generates random laser which is random in frequency and intensity. Further, the semiconductor laser is light, small, stable in performance and strong in integration.