Acoustic wave device, high frequency front-end circuit, and communication device
US10924080B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Aug 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B1/40
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An acoustic wave device includes a supporting substrate, an acoustic reflection film the supporting substrate, a piezoelectric thin film on the acoustic reflection film, and an interdigital transducer electrode the piezoelectric thin film. The acoustic reflection film includes acoustic impedance layers including therein first, second, third, and fourth low acoustic impedance layers and first, second, and third high acoustic impedance layers. The acoustic reflection film includes a first acoustic impedance layer and a second acoustic impedance layer, the first and second acoustic impedance layers each being one of the acoustic impedance layers, and the second acoustic impedance layer has an arithmetic average roughness different from that of the first acoustic impedance layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.