Global shutter imager device
US10924700B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 11, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Oct 11, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2300/0847
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel of an imager device includes a photosensitive area configured to integrate a light signal. A first capacitive storage node is configured to receive a signal representative of the number of charges generated by the photosensitive area. A second capacitive storage node is configured to receive a reference signal. A first transfer transistor is coupled between the first capacitive storage node and the photosensitive area. A second transfer transistor is coupled between the second capacitive storage node and a terminal which supplied the reference signal. The first and second two transfer transistors have a common conduction electrode and a common substrate, wherein the common substrate is coupled to the first capacitive storage node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.