Optoelectronic device
US10928659B2 · kind B2 · utility
1Cited by
104References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2019 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Feb 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04Q2011/0032
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.