Symmetric bipolar switching in memristors for artificial intelligence hardware
US10930343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2018 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Dec 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/841
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memristor device includes a first electrode, a second electrode, and a memristor layer disposed between the first electrode and the second electrode. The memristor layer is formed of a metal oxide. The memristor layer includes a plurality of regions that extend between the first electrode and the second electrode. The plurality of regions of the memristor layer are created with different concentrations of oxygen before electrical operation, and, during electrical operation, a voltage-conductance characteristic of the memristor device is controlled based on the different concentrations of oxygen of the plurality of regions. The controlling of the voltage-conductance characteristic includes increasing or decreasing the conductance of the memristor device toward a target conductance at a specific voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.