Arrays of high-aspect-ratio germanium nanostructures with nanoscale pitch and methods for the fabrication thereof
US10930490B1 · kind B1 · utility
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Key dates
| Filing date | Dec 26, 2019 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Dec 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating thin, high-aspect-ratio Ge nanostructures from high-quality, single-crystalline Ge substrates are provided. Also provided are grating structures made using the methods. The methods utilize a thin layer of graphene between a surface of a Ge substrate, and an overlying resist layer. The graphene passivates the surface, preventing the formation of water-soluble native Ge oxides that can result in the lift-off of the resist during the development of the resist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.