Semiconductor device
US10930675B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2019 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Oct 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/975
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device including a substrate with first and second regions adjacent to each other in a first direction, and first to third gate electrodes extending from the first region toward the second region. Each of the first and second regions includes a PMOSFET region and an NMOSFET region. The first to third gate electrodes extend in the first direction and are sequentially arranged in a second direction different from the first direction. The first and third gate electrodes are supplied with a first signal. The second gate electrode is supplied with a second signal that is an inverted signal of the first signal. The first gate electrode includes a first gate of the first region and a first gate of the second region. The first gates are aligned and connected with each other in the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.