Metal oxide thin film semiconductor device monolithically integrated with dissimilar device on the same wafer
US10930676B2 · kind B2 · utility
1Cited by
0References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2019 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Dec 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A monolithically integrated circuit comprising a semiconducting wafer, a metal oxide thin film semiconductor device disposed adjacent a first region of the semiconducting wafer, and a dissimilar semiconductor device disposed adjacent a second region of the semiconducting wafer and fabrication methods thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.