Display device and manufacturing method thereof
US10930720B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2019 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Mar 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/124
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One embodiment of the invention is characterized as follows. A display device comprising: a display area including a plurality of pixels, each of the pixels has a first TFT and a second TFT, the first TFT and the second TFT comprise an oxide semiconductor, the first TFT and the second TFT are covered by an interlayer insulating film, a first through hole is formed in the in the interlayer insulating film to connect a drain of the first TFT, wherein a distance d1 between a center of the first through hole and an edge of a channel of the first TFT is shorter than a distance d2 between a center of the first through hole and an edge of a channel of the second TFT, a channel length of the first TFT is shorter than a channel length of the second TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.