Layered structure, semiconductor device including layered structure, and semiconductor system including semiconductor device
US10930743B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Jun 27, 2018 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Jul 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/875
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer including an ε-phase crystalline oxide semiconductor with a first composition, and a second semiconductor layer including an ε-phase crystalline oxide semiconductor with a second composition that is different from the first composition of the first semiconductor layer, and the second semiconductor layer is layered on the first semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.