Thin film transistor, gate driver including the same, and display device including the gate driver
US10930790B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2018 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | May 31, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2310/08
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.