Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells

US10930808B2 · kind B2 · utility

Assignee

• ARRAY PHOTONICS, INC. · US

Inventors

• Ferran Suarez · Chandler, US
• Ting Liu · Rongcheng District, CN
• ARSEN SUKIASYAN · Plainsboro, US
• Ivan Hernandez · Gilbert, US
• JORDAN LANG · Sunnyvale, US
• Radek Roucka · Tempe, US
• Sabeur Siala · Sunnyvale, US
• Aymeric MAROS · San Francisco, US

Key dates

• Filing date: Jun 26, 2018
• Grant date: Feb 23, 2021
• Expiry date: Jun 26, 2038

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.