Light emitting device

US10930815B2 · kind B2 · utility

Assignee

• XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. · CN

Inventors

• Chao Liu · Chengdu, CN
• Zhendong NING · Tianjin, CN
• Ling Wang · 红钢城街道, CN
• Jun Zhang · Beijing, CN
• Weihuan LI · Shanghai, CN
• Wen Gao · Tianjin, CN
• Chaoyu WU · Xiamen, CN
• Duxiang WANG · Xiamen, CN

Key dates

• Filing date: Nov 4, 2019
• Grant date: Feb 23, 2021
• Expiry date: Nov 4, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/841

Abstract

A light emitting device includes a light emitting structure and a distributed Bragg reflector (DBR) structure disposed thereon. The light emitting structure includes an n-type confinement layer, an active layer disposed on the n-type confinement layer, and a p-type confinement layer disposed on the active layer opposite to the n-type confinement layer. The n-type and p-type confinement layers are disposed proximal and distal to the DBR structure, respectively. The DBR structure includes first to Nth DBR units. The first and Nth DBR units are disposed proximal and distal to the light emitting structure, respectively. Each of the first to Nth DBR units has a center reflection wavelength defined by λ+(z−1)λ0.