Edge-emitting semiconductor laser and method for operating a semiconductor laser
US10931084B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 12, 2018 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Apr 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. The edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. The active zone is configured for being energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence. The semiconductor layer sequence has a constant thickness throughout in the region of the longitudinal strip so that the semiconductor laser is gain-guided. The stress layer may locally stress the semiconductor layer sequence in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction. A refractive index of the semiconductor layer sequence, in regions which, seen in plan view, are located next to the longitudinal strip, for the laser radiation generated during operation is reduced by at least 2×10−4 and by at most 5×10−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.