Memristor-reconstructed near-infrared SPR biosensor with adjustable penetration depth and preparation method thereof

US10935491B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Xiangdong Jiang · Shanghai, CN
• Ruikang Guo · Sichuan, CN
• Xiang Dong · Beijing, CN
• Jimin Wang · Hamden, US
• Wei Li · Shanghai, CN

Key dates

• Filing date: Jul 3, 2019
• Grant date: Mar 2, 2021
• Expiry date: Jul 25, 2039

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N2021/258
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A memristor-reconstructed near-infrared SPR biosensor with adjustable penetration depth includes a prism, a first non-conductive dielectric film layer, a metal film layer, a second non-conductive dielectric film layer and a conductive dielectric film layer, wherein the prism is configured to generate an ATR (Attenuated Total Reflections) attenuation evanescent wave; the first non-conductive dielectric film layer, the metal film layer, and the second non-conductive dielectric film layer define a sensing unit for achieving a basic sensing function; the metal film layer, the second non-conductive dielectric film layer and the conductive dielectric film layer define a memristive unit; a voltage applying device is provided between the first electrode and the second electrode for applying a bias voltage to the memristive unit so as to realize infrared memristive reconfiguration. A preparation method and a penetration depth tuning method of the memristor-reconstructed near-infrared SPR biosensor with adjustable penetration depth are also disclosed.