Ultra-high sensitivity dual-gated biosensor based on MOS transistor
US10935551B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2018 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Nov 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/308
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An ultra-high sensitivity dual-gated biosensor based on an MOS transistor, which is applicable to detection of a series of early tumors. The sensor is prepared and processed by using SOI wafers, and a unique dual-gated structure is realized by ion implantation technique. The sensor is prepared by an ultraviolet lithography combined with an NLD etching method, realizing trace, instant and marker-free detection of tumor markers. The method detects a change in capacitance in the channel during binding of antigen antibodies. The detection method involved in the invention is more stable and strong in anti-interference, can meet the demands in the aspect of detection range and sensitivity, and especially has extremely outstanding detection sensitivity, and can detect a sample with a lowest concentration in the range of 1 fg/ml˜1 ng/ml.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.