Current sensing circuit and method
US10935592B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 7, 2018 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Nov 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0027
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A circuit includes a field effect transistor having a gate driven via a drive signal. The field effect transistor has a drain-source voltage drop indicative of the intensity of a current flowing in the current path through the field effect transistor. The circuit also includes a pair of sensing transistors that include a first sensing field effect transistor arranged with its drain and gate coupled with the drain and the gate of the field effect transistor, respectively, and a second sensing field effect transistor having a gate configured for receiving a replica of the drive signal. The second sensing field effect transistor is arranged with its current path in series with the current path of the first sensing field effect transistor. A sensing signal at a sensing node is indicative of the current intensity flowing in the current path of the field effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.