Epitaxial growth of cubic and hexagonal InN films and their alloys with AlN and GaN

US10937649B2 · kind B2 · utility

Assignee

• The Government of the United States of America, as represented by the Secretary of the Navy · US

Inventors

• Neeraj Nepal · Salem, US
• Charles R. Eddy, Jr. · Columbia, US
• Nadeemmullah A. Mahadik · Springfield, US
• Syed B. Qadri · Fairfax Station, US
• Michael J. Mehl · Davidsonville, US

Key dates

• Filing date: Dec 16, 2014
• Grant date: Mar 2, 2021
• Expiry date: Nov 7, 2035

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/406
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of InxGa1−xN, AlxGa1−xN, AlxIn1−xN, or AlxInyGa1−(x+y)N.