Semiconductor device and method for manufacturing thereof
US10937725B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2017 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Dec 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/8484
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises: a ceramic substrate having conductor layers on both surfaces thereof; a semiconductor element joined to the upper surface conductor layer of the ceramic substrate; a frame member arranged on the upper surface conductor layer so as to surround a side surface of the semiconductor element; and an electrode, which is joined to an upper portion of the semiconductor element via a second fixing layer, and has fitting portions on a side surface of the electrode. On an inner wall of the frame member, fitting portions to be fitted to the fitting portions of the electrode and four positioning portions extending from the inner wall of the frame member to the side surfaces of the electrode are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.