Method of manufacturing a semiconductor device
US10937856B2 · kind B2 · utility
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12References
19Claims
0Family size
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Key dates
| Filing date | May 29, 2019 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | May 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A semiconductor device and a manufacturing method thereof, the semiconductor device including an insulation layer; a metal resistance pattern on the insulation layer; a spacer on a side wall of the metal resistance pattern; and a gate contact spaced apart from the spacer, the gate contact extending into the insulation layer, wherein the insulation layer includes a projection projecting therefrom, the projection contacting the gate contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.