Semiconductor device
US10937874B2 · kind B2 · utility
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10References
8Claims
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Assignee
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Key dates
| Filing date | Aug 10, 2016 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Apr 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a gate electrode groove formed in contact with a drift region, a well region, and a source region; a gate electrode formed on a surface of the gate electrode groove via an insulating film; a source electrode groove in contact with the gate electrode groove; a source electrode electrically connected to a source region; and a gate wiring electrically insulated from the source electrode and formed inside the source electrode groove in contact with the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.