Semiconductor device
US10937887B2 · kind B2 · utility
4Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 2019 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | May 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a gate structure on the substrate and a first conductive connection group on the gate structure. The gate structure includes a gate spacer and a gate electrode. The first conductive connection group includes a ferroelectric material layer. At least a part of the ferroelectric material layer is disposed above an upper surface of the gate spacer. And the ferroelectric material layer forms a ferroelectric capacitor having a negative capacitance in the first conductive connection group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.