Light-emitting diodes with buffer layers
US10937926B2 · kind B2 · utility
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4References
10Claims
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Key dates
| Filing date | Jul 14, 2017 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Jul 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer includes a substrate (1), a buffer layer (2) deposited on the substrate (1), and an epitaxial layer (4) above the buffer layer (2). The buffer layer (2) includes a plurality of semiconductor material layers (22) and a plurality of oxygen-doped material layers (21). The semiconductor material layers (22) and the oxygen-doped material layers (21) are deposited in an alternating arrangement on top of each other. Oxygen concentrations of the oxygen-doped material layers (21) gradually decrease along a direction from the substrate (1) to the epitaxial layer (4).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.