Vertical-side solder method and package for power GaN devices
US10939553B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Jan 22, 2019 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Jan 22, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A packaged GaN semiconductor device with improved heat dissipation is provided. A GaN device is packaged on a printed circuit board (PCB) with a vertical side of the device, and optionally the back side of the device, in thermal contact with the PCB. The packaging is compatible with surface mount technologies such as land grid array (LGA), ball grid array (BGA), and other formats. Thermal contact between the PCB and a vertical side of the device, and optionally the back side of the device, is made through solder. The solder used for the thermal contact may also connect a source terminal of the device, which also improves electrical stability of the device. The packaging is particularly suitable for GaN HEMT devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.