3D stack configuration for 6-axis motion sensor
US10941033B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2019 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Aug 14, 2039 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/038
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method includes fusion bonding a first side of a MEMS wafer to a second side of a first handle wafer. A TSV is formed from a first side of the first handle wafer to the second side of the first handle wafer and into the first MEMS wafer. A dielectric layer is formed on the first side of the first handle wafer. A tungsten via is formed in the dielectric layer. Electrodes are formed on the dielectric layer. A second MEMS wafer is eutecticly bonded with a first eutectic bond to the electrodes, wherein the TSV electrically connects the first MEMS wafer to the second MEMS wafer. Standoffs are formed on a second side of the first MEMS wafer. A CMOS wafer is eutecticly bonded with a second eutectic bond to the standoffs, wherein the second eutectic bond includes different materials than the first eutectic bond.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.