Growing two-dimensional materials through heterogeneous pyrolysis
US10941505B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2019 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Mar 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02568
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a sp2 boron nitride (BN) layer on a surface of a substrate, the method comprising providing first and second precursors at the surface of the substrate, the first precursor being a source of boron and the second precursor being a source of nitrogen; heating the substrate to a temperature greater than a pyrolysis point for either of the first and second precursors; pyrolyzing the first precursor at the surface of the substrate; activating the second precursor at the surface of the substrate with the pyrolyzed first precursor; and adsorbing the pyrolyzed first precursor and the activated second precursor onto the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.