Patent · US Active

Geometry tuning of fin based transistor

US10944006B2 · kind B2 · utility

0Cited by

0References

21Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Glenn A. Glass · Portland, US
Anand S. Murthy · Beaverton, US
Karthik Jambunathan · Hillsboro, US
Chandra S. Mohapatra · Hillsboro, US
Hei Kam · Sunnyvale, US
Nabil G. Mistkawi · Keizer, US
Jun Sung Kang · Hillsboro, US
Biswajeet Guha · Hillsboro, US

Key dates

Filing date	Mar 30, 2016
Grant date	Mar 9, 2021
Priority date	—
Expiry date	Jul 17, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/853
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A trench is formed in an insulating layer to expose a native fin on a substrate. A replacement fin is deposited on the native fin in the trench. The replacement fin is trimmed laterally.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.