Hybrid ultrasonic transducer and method of forming the same
US10944041B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2019 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Sep 17, 2039 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0792
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A hybrid ultrasonic transducer and a method of manufacturing the same are provided. A method of manufacturing a semiconductor device includes the forming of a first substrate and a second substrate. The forming of the first substrate includes: depositing a membrane stack over a first dielectric layer; forming a third electrode over the first dielectric layer; and depositing a second dielectric layer over the membrane stack and the third electrode. The forming of the second substrate includes: forming a redistribution layer (RDL) having a fourth electrode; and etching a first cavity on a surface of the RDL adjacent to the fourth electrode. The method further includes: forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.