Patent · US Active

Quantum dot light emitting diode and quantum dot light emitting display device including the same

US10944067B2 · kind B2 · utility

0Cited by
3References
20Claims
0Family size

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Key dates

Filing dateNov 20, 2019
Grant dateMar 9, 2021
Priority date
Expiry dateNov 22, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K2101/40

Abstract

A quantum dot light emitting diode comprises first and second electrodes facing each other; a hole injection layer disposed between the first electrode and the second electrode and having a first HOMO level; a first hole transporting layer disposed between the hole injection layer and the second electrode and having a second HOMO level that is lower than the first HOMO level; a second hole transporting layer disposed between the first hole transporting layer and the second electrode and having a third HOMO level that is lower than the second HOMO level; and a quantum dot light emitting layer disposed between the second hole transporting layer and the second electrode and having a fourth HOMO level that is lower than the third HOMO level, wherein a difference between the first HOMO level and the second HOMO level is greater than a difference between the second HOMO level and the third HOMO level and less than a difference between the third HOMO level and the fourth HOMO level.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.