Film bulk acoustic resonators in thin LN-LT layers
US10944380B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2020 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Nov 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/568
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Acoustic resonator devices, filter devices, and methods of fabrication are disclosed. A resonator device includes a single-crystal piezoelectric plate having a front surface and a back surface opposite the front surface, wherein the back surface is coupled to a surface of a substrate. A floating back-side conductor pattern is formed on a portion of the back surface. A front-side conductor pattern including two electrodes is formed on a portion of the front surface opposite the back-side conductor. A portion of the piezoelectric plate forms a diaphragm spanning a cavity in the substrate and the front-side conductor pattern is on the diaphragm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.