Dielectric, capacitor and semiconductor device including the same, and method of preparing the dielectric
US10947126B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | May 10, 2019 |
| Grant date | Mar 16, 2021 |
| Priority date | — |
| Expiry date | May 10, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/96
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group: AxByO3-δ <Formula 1>
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.