Patent · US Active

Tunable memristor noise control

US10949738B1 · kind B1 · utility

1Cited by
2References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 4, 2019
Grant dateMar 16, 2021
Priority date
Expiry dateOct 4, 2039

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C13/0061
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memristor matrix comprising a crossbar array, a multiplexer and a noise control circuit. The noise control circuit may comprise a threshold comparator and a threshold feedback circuit to receive a first threshold and a second threshold and output a threshold signal based, in part, on an output of the threshold comparator.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.