Patent · US Active

Method for integrating power chips and power electronics modules

US10950513B2 · kind B2 · utility

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1References
12Claims
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Key dates

Filing dateDec 5, 2017
Grant dateMar 16, 2021
Priority date
Expiry dateDec 5, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05K2201/10174
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The method comprises the steps of 1) producing first and second blanks (EB1, EB2) by laminating insulating and conductive inner layers (PP, CP, E1) on copper plates forming a base (MB1, MB2), at least one electronic chip (MT, MD) being sandwiched between the blanks, said blanks being produced such that their upper lamination surfaces have matching profiles, 2) stacking and fitting the blanks via their matching profiles, and 3) press-fitting the blanks to form a laminated sub-assembly for an integrated power electronics device. The method uses IMS-type techniques.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.